Cryogenic Probe Station
Closed-cycle on-wafer DC, pulsed, noise and RF characterization from cryogenic temperatures upward
The lab measures transistors on-wafer from liquid-helium temperature upward, and models them with industry-standard EDA tools.
Our setups together cover 4 K to 1000 K, from liquid-helium cryogenics to high-temperature operation. Each measurement method has its own usable window within that range.
Closed-cycle on-wafer DC, pulsed, noise and RF characterization from cryogenic temperatures upward
Shielded on-wafer probing and temperature-controlled measurements up to high temperature
Dynamic on-resistance, quiescent-bias and pulse-width studies, self-heating
Output/transfer curves, gate leakage, impact-ionization hole current
Trap capture/emission kinetics, current collapse and recovery
1/f and G–R noise spectra, trap activation energies
Calibrated, de-embedded S-parameters; equivalent-circuit extraction
ASM-HEMT parameter extraction from DC, pulsed and S-parameter data
Small-signal models, measured vs. modeled S-parameters