Advanced Semiconductor
Device LaboratoryASDL · Texas Tech University Electrical &
Computer EngineeringTEXAS TECH UNIVERSITY

Publications

Peer-reviewed articles, conference papers and presentations from the Advanced Semiconductor Device Laboratory.

Journal Articles

  1. [J.3]
    A. Ray, I. Song, T. Kim, “Temperature-Driven Transition From Persistent Trapping to Thermally Enhanced Recovery in GaN HEMTs From 4 to 600 K,” IEEE Electron Device Letters (accepted, Oct. 2026), 2026.
  2. [J.2]
    W. Amir, A. Ray, J.-H. Yeom, T. Hoshi, H.-M. Kwon, T. Kim, “Mitigating Charge Trapping and Enhancing RF Performance in AlGaN/GaN HEMTs via Back-Barrier Engineering,” Materials Science in Semiconductor Processing, vol. 215, Art. no. 111022, 2026.
  3. [J.1]
    S. Chakraborty, J.-H. Lee, A. Ray, H.-M. Kwon, T. Kim, “Comparative RF De-Embedding of HEMTs Using Cold-FET vs Open-Short Techniques,” Materials Science in Semiconductor Processing, vol. 212, Art. no. 110753, 2026.

Posters & Presentations

  1. [P.2]
    A. Ray, I. Song, K. McAtee, T. Kim, “Decoupled Extraction of High-Field Transport Parameters in AlGaN/GaN HEMTs for High-Frequency Power Applications,” Poster Presentation, 2026.
  2. [P.1]
    A. Ray, E. Sadiq, P. Biswas, T. Kim, “Energy- and Fluence-Dependent Proton Irradiation Effects on Carrier Transport and Trap Dynamics in AlGaN/GaN HEMTs,” Center for Integrated Nanotechnologies (CINT), NSF-supported, 2026.

For a full list of Dr. Kim's publications, see his Google Scholar profile.