Announcements, milestones and highlights from the Advanced Semiconductor Device Laboratory.
Avishak Ray’s first IEEE Electron Device Letters paper, Temperature-Driven Transition From Persistent Trapping to Thermally Enhanced Recovery in GaN HEMTs From 4 to 600 K, has been accepted for publication. Congratulations, Avishak!
Poster at CINT: Energy- and Fluence-Dependent Proton Irradiation Effects on Carrier Transport and Trap Dynamics in AlGaN/GaN HEMTs.
The National Science Foundation has awarded $450,000 to Dr. Taewoo Kim (PI) and Dr. Ravindra Joshi, ECE Chair (co-PI), to study how proton radiation affects GaN High Electron Mobility Transistors. Working with Los Alamos National Laboratory's Ion Beam Materials Laboratory through the Center for Integrated Nanotechnologies, the team will link radiation-induced defects to changes in charge transport and build a physics-based framework for radiation-hardness-by-design. The goal is to cut device qualification from months of testing to as little as one confirmatory test, for satellite communications, defense radar, deep-space missions and high-power electronics.
New PhD students join the lab for the Fall 2026 semester.